Basic Electrical and Electronics Engineering-I
Paper Code: ES101
Credits: 4
Basic Electrical Engineering-I
DC Network Theorem: Definition of electric circuit, network, linear circuit, non-linear circuit, bilateral circuit, unilateral circuit, Dependent source, Kirchhoff’s law, Principle of superposition. Source equivalence and conversion, Thevenin’s theorem, Norton Theorem, nodal analysis, mesh analysis, star-delta conversion. Maximum power transfer theorem with proof.
Electromagnetism: Biot-savart law, Ampere’s circuital law, field calculation using Biot-savart & ampere’s circuital law. Magnetic circuits, Analogous quantities in magnetic and electric circuits, Faraday’s law, Self and mutual inductance. Energy stored in a magnetic field, B-H curve, Hysteretic and Eddy current losses, Lifting power of Electromagnet.
AC fundamental: Production of alternating voltage, waveforms, average and RMS values, peak factor, form factor, phase and phase difference, phasor representation of alternating quantities, phasor diagram, behavior of AC series , parallel and series parallel circuits, Power factor, Power in AC circuit, Effect of frequency variation in RLC series and parallel circuits, Resonance in RLC series and parallel circuit, Q factor, band width of resonant circuit.
Basic Electronics Engineering-I
Pre-requisites: Knowledge of Class XII level electronics, Physics & Mathematics.
Module – 1: Semiconductors:
Crystalline material: Mechanical properties, Energy band theory, Fermi levels; Conductors, Semiconductors and Insulators: electrical properties, band diagrams. Semiconductors: intrinsic and extrinsic, energy band diagram, electrical conduction phenomenon, P-type and N-type semiconductors, drift and diffusion carriers.
Module – 2: Diodes and Diode Circuits:
Formation of P-N junction, energy band diagram, built-in-potential forward and reverse biased P-N junction, formation of depletion zone, V-I characteristics, Zener breakdown, Avalanche breakdown and its reverse characteristics; Junction capacitance and Varactor diode. Simple diode circuits, load line, linear piecewise model; Rectifier circuits: half wave, full wave, PIV, DC voltage and current, ripple factor, efficiency, idea of regulation.
Module – 3: Bipolar Junction Transistors:
Formation of PNP / NPN junctions, energy band diagram; transistor mechanism and principle of transistors, CE, CB, CC configuration, transistor characteristics: cut-off active and saturation mode, transistor action, injection efficiency, base transport factor and current amplification factors for CB and CE modes. Biasing and Bias stability: calculation of stability factor;
Outcome:
Students will be able to identify semiconductor materials, draw band-diagrams, distinguish between intrinsic and extrinsic semiconductors, n- and p- type semiconductors, calculate drift and diffusion current components.
Students must be able to explain the junction properties and the phenomenon of rectification, draw the I-V characteristics and identify operating points; Calculate ripple factors, efficiency of power supplies. Students will be able to draw and explain the I-V characteristics of BJTs – both input and output; learn to bias transistors, both as amplifiers and switches; identify operating points.
Recommended Books:
Text:
9. Sedra & Smith: Microelectronics Engineering.
10. Millman & Halkias: Integrated Electronics.
References:
b) Malvino: Electronic Principle.
c) Schilling & Belove: Electronics Circuits.
d) Millman & Grabal: Microelectronics.
e) Salivahanan: Electronics Devices & Circuits.
f) Boylestad & Nashelsky: Electronic Devices & Circuit Theory
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